isocom components ltd unit 25b, park view road west, park view industrial estate, brenda road hartlepool, cleveland, ts25 1yd tel: (01429) 863609 fax :(01429) 863581 isocom inc 720 e., park boulevard, suite 104, plano, tx 75074 usa tel: (972) 423-5521 fax: (972) 422-4549 30/7/97 db90038-aas/a1 approvals l ul recognised, file no. e91231 'x' specification approvals l l l l l cnx82axg - vde 0884 approved l certified to en60950 by the following test bodies :- nemko - certificate no. p96101299 fimko - registration no. 190469-01..22 semko - reference no. 9620076 01 demko - reference no. 305567 description the cnx82ag series of optically coupled isolators consist of an infrared light emitting diode and a npn silicon photo transistor in a standard 6 pin dual in line plastic package with the base pin unconnected. features l high current transfer ratio (40% min) l low saturation voltage suitable for ttl integrated circuits l high bv ceo (50v min) l high isolation voltage (5.3kv rms ,7.5kv pk ) l base pin unconnected for improved noise immunity in high emi environment applications l dc motor controllers l industrial systems controllers l signal transmission between systems of different potentials and impedances 0.5 1 34 6 dimensions in mm 7.0 6.0 1.2 3.0 3.35 4.0 3.0 2.54 7.62 6.62 25 absolute maximum ratings (25c unless otherwise specified) storage temperature -55c to + 150c operating temperature -55c to + 100c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 60ma reverse voltage 6v power dissipation 105mw output transistor collector-emitter voltage bv ceo 50v emitter-collector voltage bv eco 6v power dissipation 160mw power dissipation total power dissipation 200mw (derate linearly 2.67mw/ c above 25c) non-base lead optically coupled isolator phototransistor output cnx82axg, cnx82ag 0.5 7.62 10.16 0.26
db90038-aas/a1 parameter min typ max units test condition input forward voltage (v f ) 1.2 1.5 v i f = 10ma reverse voltage (v r )6vi r = 10 m a reverse current (i r )10 m av r = 6v output collector-emitter breakdown (bv ceo )50 v i c = 1ma ( note 2 ) emitter-collector breakdown (bv eco ) 6 v i e = 100 m a collector-emitter dark current (i ceo )50nav ce = 10v coupled current transfer ratio (i c / i f ) (note 2) 0.4 10ma i f , 0.4v v ce 1.5 10ma i f , 5v v ce collector-emitter saturation voltagev ce (sat) 0.4 v 10ma i f , 4ma i c input to output isolation voltage v iso 5300 v rms see note 1 7500 v pk see note 1 input-output isolation resistance r iso 5x10 10 w v io = 500v (note 1) turn-on time t on 3 m sv cc = 5v , i c = 2ma , turn-off time t off 3 m sr l = 100 w turn-on time t on 12 m sv cc = 5v , i c = 2ma , turn-off time t off 12 m sr l = 1k w note 1 measured with input leads shorted together and output leads shorted together. note 2 special selections are available on request. please consult the factory. 30/7/97 electrical characteristics ( t a = 25c unless otherwise noted )
db90038-aas/a1 30/7/97 50 ambient temperature t a ( c ) 150 0 200 ambient temperature t a ( c ) collector power dissipation p c (mw) 60 30 20 10 0 40 50 -30 0 25 50 75 100 125 collector power dissipation vs. ambient temperature forward current vs. ambient temperature -30 0 25 50 75 100 100 0 0.5 1.0 1.5 i f = 10ma v ce = 0.4v forward current i f (ma) relative current transfer ratio vs. ambient temperature relative current transfer ratio 70 80 1 2 5 10 20 50 0 0.8 1.2 1.6 2.0 2.4 0.4 2.8 v ce = 0.4v t a = 25c relative current transfer ratio relative current transfer ratio vs. forward current forward current i f (ma) collector current vs. collector-emitter voltage collector-emitter voltage v ce ( v ) collector current i c (ma) 0 2 4 6 8 10 0 10 20 30 40 50 t a = 25c i f = 5ma 10 15 20 30 50 -30 0 25 50 75 100 125 ambient temperature t a ( c ) collector-emitter saturation voltage v ce(sat) (v) collector-emitter saturation voltage vs. ambient temperature 0 0.04 0.08 0.12 0.16 0.20 0.24 0.28 i f = 10ma i c = 4ma -30 0 25 50 75 100 ambient temperature t a ( c )
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